Innovation Power Solutions SiC Power

    Gen 4 SiC FETs

    Efficient Power Conversion Meets Efficient Manufacturing

    Highest-Performance, Most Efficient SiC FETs. Delivered.

    With RDS(on) ranging from 5.4 to 60 mohm in the 750V UJ4C/SC series and 23 to 70 mohm in the 1200V UF4C/SC series, our Gen 4 SiC FETs provide automotive, renewables, and broad industrial power supply designers with the industry's best performance in multiple packaging options, enabling flexibility that delivers the optimum cost-efficient SiC power solution.

    Learn more about our 9mΩ SiC FET in surface-mount packaging.

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    Industry Lowest RDS(on)

    From 5.4 to 60 mohm 750 V rated RDS(on) in industry-standard packages


    Superior Performance

    Industry-best Figures of Merit for RDS(on) x Area, RDS(on) x Coss,tr and RDS(on) x Eoss


    800 V Bus Applications

    1200 V devices from 23 to 70 mohm ideal for 800 V bus applications


    Design Flexibility

    Optimize for efficiency, thermal management, complexity and cost
    Watch Video

    Voltage RDS(on)
    (mohm)
    @ 25°C    		 RDS(on)
    (mohm)
    @ 125°C    		 TO-247-3L
    TO-247-3L    		 TO-247-4L
    TO-247-4L    		 D2PAK-7L
    D2PAK-7L    		 TOLL
    TOLL
    750 V 5.4 9.3 – – – UJ4SC075005L8S
    5.9 9.8 – UJ4SC075006K4S – –
    8.6 14.4 – – – UJ4SC075008L8S
    9 14.8 – UJ4SC075009K4S
    UJ4SC075009B7S    		 –
    11 18.4 – UJ4SC075011K4S
    UJ4SC075011B7S    		 –
    18 29 – –
    UJ4SC075018B7S    		 UJ4SC075018L8S
    31
    UJ4C075018K3S
    UJ4C075018K4S    		 – –
    23 39
    UJ4C075023K3S
    UJ4C075023K4S
    UJ4C075023B7S    		 –
    33 57
    UJ4C075033K3S
    UJ4C075033K4S
    UJ4C075033B7S    		 –
    44 75
    UJ4C075044K3S
    UJ4C075044K4S
    UJ4C075044B7S    		 –
    58 106
    UJ4C075060K3S
    UJ4C075060K4S
    UJ4C075060B7S    		 –
    1200 V 23 42 – UF4SC120023K4S UF4SC120023B7S –
    30 56 – UF4SC120030K4S UF4SC120030B7S –
    53 112 UF4C120053K3S UF4C120053K4S
    UF4C120053B7S    		 –
    72 140 UF4C120070K3S UF4C120070K4S
    UF4C120070B7S    		 –
    AEC-Q101 qualified

    • Figures of Merit Parameters Normalized to Gen 4 SiC FETs

      Based on published datasheets 7/22 from leading 20 mohm - 30 mohm SiC MOSFETs.

      Key Features:

      • 750 V VDS rating
      • Low RDS(on) from 5.4 mohm to 60 mohm
      • Best-in-class Figures of Merit (FoM)
      • 5µs short-circuit withstand time @ 6 mohm
      • Safely driven with standard 0 V to 12 V or 15 V gate drive voltage
      • Excellent threshold noise margin maintained with true 5V threshold voltage
      • Operates with all Si IGBT, Si MOSFET and SiC MOSFET drive voltages
      • Built-in ESD gate protection clamp
      • Industry-standard TO-247-3L & TO-247-4L (Kelvin), TO-Leadless (TOLL), and D2PAK-7L packages
      • AEC-Q101 qualified devices are noted above. Qualification in process for all others. Contact Sales for more information.

      Resources:

    • Figures of Merit Parameters Normalized to Gen 4 SiC FETs

      Based on published datasheets 4/22 from leading 30 mohm - 40 mohm SiC MOSFETs in TO-247-3L and TO-247-4L packages.

      Key Features:

      • 1200 V VDS rating
      • Low RDS(on) from 23 mohm to 70 mohm
      • Best-in-class Figures of Merit (FoM)
        • RDS x Area
        • RDS(on) x Coss,tr
        • RDS(on) x Eoss
        • RDS(on) x Qg
      • Safely driven with standard 0 V to 12 V or 15 V gate drive voltage
      • Excellent threshold noise margin maintained with true 5 V threshold voltage
      • Operates with all Si IGBT, Si MOSFET and SiC MOSFET drive voltages
      • Built-in ESD gate protection clamp
      • Industry-standard TO-247-3L and TO-247-4L (Kelvin) packages
      • AEC-Q101 qualification in process. Contact Sales for more information.

      Resources:

    Figure-of-Merit (FoM) comparisons are critical for power designers to identify the best technology for their design, not merely based on a specific product spec, but by comparing performance widely across a variety of topologies, power levels, etc.

    The datasheet results shown below illustrate how the UnitedSiC (now Qorvo) high-performance Gen 4 series deliver lower conduction loss, simple gate driving, and reduced switching losses in hard and soft-switched circuits compared to competing SiC FET devices.

    750 V SiC FETs

    Hard-Switching

    • Lowest total losses based on low Eoss / Qoss x RDS(on)
    • Nearly 1.5X better than the competition

    RDS(on) x Area

    • Lowest conduction losses across useful temperature range, for a given footprint or package type

    Soft-Switching

    • Maintaining low RDS(on) x Coss,tr enables higher power density in soft-switched applications
    • 2.5-6X lower gate drive losses by Qg x VDrive
    • Excellent body diode enables reliable operation out of resonance

    1200 V SiC FETs

    Hard-Switching

    • Lowest total losses based on low Eoss / Qoss x RDS(on)
    • Nearly 2X better than the competition

    Soft-Switching

    • Maintaining low RDS(on) x Coss,tr enables higher power density in soft-switched applications
    • 5-10X lower gate drive losses by Qg x VDrive
    • Excellent body diode enables reliable operation out of resonance<

    RDS(on) x Qg

    • Low RDS(on) x Qg and 0-12V gate drive voltage reduces driver losses, especially in high-frequency soft switched applications
    • Simplifies design
    • Reduces board-level thermal management

    1.  Evaulate with FET-Jet Calculator. Get instant loss and efficiency results for multiple power topologies.

    2.  Run detailed simulation using SPICE models.

    3.  Purchase devices, verify design. Parts are in stock at key global distributors.


    FET-Jet Calculator™

    Quickly evaluate and identify the optimal SiC device for your power topology


    SiC FET Design Tips

    Important SiC FET design considerations and snubber recommendations


    SiC FET User Guide

    Practical solutions and guidelines for using RC snubbers with fast switching SiC devices


    Product Selector Guide

    Find the ideal SiC FET and complimentary SiC devices for your high-performance power design

    If you have a technical question, our power experts are available.

    For samples, please fill out our Request a Sample form.

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