Highest-performance, most efficient SiC FETs.

Delivered.

 

With 13 different RDS(on) and package combinations ranging from 6mΩ to 60mΩ, the 750V Gen 4 UJ4C/SC series of SiC FETs provides designers with the industry's best performance and most device options, enabling more design flexibility to achieve an optimum cost/efficiency trade-off while maintaining generous design margins and circuit robustness.

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Industry Lowest RDS(on)

From 6mΩ to 60mΩ 750V rated RDS(on) in industry-standard packages

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Superior Performance

Industry-best Figures of Merit for RDS(on) x Area, RDS(on) x Coss,tr and RDS(on) x Eoss

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Robust SCWT Rating

Industry-leading short-circuit withstand time of 5μs at 6mΩ for ultimate protection

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Design Flexibility

Optimize for efficiency, thermal management complexity and cost

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Features

  • 750V VDS rating
  • Low RDS(on) from 6mΩ to 60mΩ
  • Best-in-class Figures of Merit (FoM)
  • 5µs short-circuit withstand time @ 6mΩ
  • Safely driven with standard 0V to 12V or 15V gate drive voltage
  • Excellent threshold noise margin maintained with true 5V threshold voltage
  • Operates with all Si IGBT, Si MOSFET and SiC MOSFET drive voltages
  • Built-in ESD gate protection clamp
  • AEC-Q101 qualified
  • Industry-standard TO-247-3L and TO-247-4L (Kelvin) packages

Product Specifications

Voltage RDS(on) (mΩ)
@ 25°C		 RDS(on) (mΩ)
@ 125°C		 TO-247-3L
TO-247-3L		 TO-247-4L
TO-247-4L
750V 5.9 9.8   UJ4SC075006K4S
9 14.8   UJ4SC075009K4S
11 18.4   UJ4SC075011K4S
18 31 UJ4C075018K3S UJ4C075018K4S
23 39 UJ4C075023K3S UJ4C075023K4S
33 57 UJ4C075033K3S UJ4C075033K4S
44 75 UJ4C075044K3S UJ4C075044K4S
58 106 UJ4C075060K3S UJ4C075060K4S

Selecting the best SiC FET for your design

 

1

Evaluate with FET-Jet Calculator

Get instant loss and efficiency results for multiple power topologies

2

Run detailed simulation

Using SPICE models

3

Purchase devices, verify design

In-stock from key global distributors

Industry-leading Figures of Merit (FoM)

Figure-of-Merit (FoM) comparisons are critical for power designers to identify the best technology for their design, not merely based on a specific product spec, but by comparing performance widely across a variety of topologies, power levels, etc. 

The datasheet results shown below illustrate how UnitedSiC’s high-performance Gen 4 series devices deliver lower conduction loss, simple gate driving, and reduced switching losses in hard and soft-switched circuits compared to competing SiC FET devices.

Supporting Design Resources

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FET-Jet CalculatorTM

Quickly evaluate and identify the optimal SiC device for your power topology

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SiC FET Design Tips

Important SiC FET design considerations and snubber recommendations

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SiC FET User Guide

Practical solutions and guidelines for using RC snubbers with fast switching SiC devices

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Product Selector Guide

Find the ideal SiC FET and complimentary SiC devices for your high-performance power design

We're here to help!

If you have a technical question, our power experts are always available at info@unitedsic.com

For samples, contact sales at sales@unitedsic.com 

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