Highest-performance, most efficient SiC FETs.
Delivered.

 

With 13 different RDS(on) and package combinations ranging from 6mΩ to 60mΩ in the 750V UJ4C/SC series and six different RDS(on) and package combinations ranging from 23mΩ to 70mΩ in the 1200V UF4C/SC series, our Gen 4  SiC FETs provide designers with the industry's best performance and multiple device options, enabling more design flexibility that delivers the optimum cost-efficient power design.

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Industry Lowest RDS(on)

From 6mΩ to 60mΩ 750V rated RDS(on) in industry-standard packages

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Superior Performance

Industry-best Figures of Merit for RDS(on) x Area, RDS(on) x Coss,tr and RDS(on) x Eoss

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800V Bus Applications 

1200V devices from 23mΩ to 70mΩ ideal for 800V bus applications.

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Design Flexibility

Optimize for efficiency, thermal management, complexity and cost
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Product Specifications

Voltage RDS(on) (mΩ)
@ 25°C		 RDS(on) (mΩ)
@ 125°C		 TO-247-3L
TO-247-3L		 TO-247-4L
TO-247-4L
750V 5.9 9.8 - UJ4SC075006K4S
9 14.8 - UJ4SC075009K4S
11 18.4 - UJ4SC075011K4S
18 31 UJ4C075018K3S UJ4C075018K4S
23 39 UJ4C075023K3S UJ4C075023K4S
33 57 UJ4C075033K3S UJ4C075033K4S
44 75 UJ4C075044K3S UJ4C075044K4S
58 106 UJ4C075060K3S UJ4C075060K4S
1200V
 23 42  - UF4SC120023K4S
30  56 - UF4SC120030K4S
53 112  UF4C120053K3S UF4C120053K4S
72 140  UF4C120070K3S UF4C120070K4S

750V SiC FETs

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  • 750V VDS rating
  • Low RDS(on) from 6mΩ to 60mΩ
  • Best-in-class Figures of Merit (FoM)
  • 5µs short-circuit withstand time @ 6mΩ
  • Safely driven with standard 0V to 12V or 15V gate drive voltage
  • Excellent threshold noise margin maintained with true 5V threshold voltage
  • Operates with all Si IGBT, Si MOSFET and SiC MOSFET drive voltages
  • Built-in ESD gate protection clamp
  • AEC-Q101 qualified
  • Industry-standard TO-247-3L and TO-247-4L (Kelvin) packages

1200V SiC FETs

FoM Parameters Normalized to G4 SiC FETs

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Based on published datasheets 4/22 from leading 30mΩ-40mΩ SiC MOSFETs, *TO-247-3L, **TO-247-4L

  • 1200V VDS rating
  • Low RDS(on) from 23mΩ to 70mΩ
  • Best-in-class Figures of Merit (FoM)
    • RDS x Area
    • RDS(on) x Coss,tr
    • RDS(on) x Eoss
    • RDS(on) x Qg
  • Safely driven with standard 0V to 12V or 15V gate drive voltage
  • Excellent threshold noise margin maintained with true 5V threshold voltage
  • Operates with all Si IGBT, Si MOSFET and SiC MOSFET drive voltages
  • Built-in ESD gate protection clamp
  • Industry-standard TO-247-3L and TO-247-4L (Kelvin) packages

Industry-leading Figures of Merit (FoM)

Figure-of-Merit (FoM) comparisons are critical for power designers to identify the best technology for their design, not merely based on a specific product spec, but by comparing performance widely across a variety of topologies, power levels, etc. 

The datasheet results shown below illustrate how the UnitedSiC (now Qorvo) high-performance Gen 4 series deliver lower conduction loss, simple gate driving, and reduced switching losses in hard and soft-switched circuits compared to competing SiC FET devices.

750V SiC FETs

 

1200V SiC FETs

Selecting the best SiC FET for your design

 

1

Evaluate with FET-Jet Calculator

Get instant loss and efficiency results for multiple power topologies

2

Run detailed simulation

Using SPICE models

3

Purchase devices, verify design

In-stock from key global distributors

Supporting Design Resources

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FET-Jet CalculatorTM

Quickly evaluate and identify the optimal SiC device for your power topology

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SiC FET Design Tips

Important SiC FET design considerations and snubber recommendations

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SiC FET User Guide

Practical solutions and guidelines for using RC snubbers with fast switching SiC devices

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Product Selector Guide

Find the ideal SiC FET and complimentary SiC devices for your high-performance power design

We're here to help!

If you have a technical question, our power experts are always available at info@unitedsic.com

For samples, contact sales at sales@unitedsic.com 

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