Highest-performance, most efficient SiC FETs.
Delivered.
With RDS(on) and package combinations ranging from 5.4mΩ to 60mΩ in the 750V UJ4C/SC series and 23mΩ to 70mΩ in the 1200V UF4C/SC series, our Gen 4 SiC FETs provide power designers with the industry's best performance and multiple device options, enabling more design flexibility that delivers the optimum cost-efficient SiC power solution.

Industry Lowest RDS(on)
From 5.4mΩ to 60mΩ 750V rated RDS(on) in industry-standard packages

Superior Performance
Industry-best Figures of Merit for RDS(on) x Area, RDS(on) x Coss,tr and RDS(on) x Eoss

800V Bus Applications
1200V devices from 23mΩ to 70mΩ ideal for 800V bus applications.
Optimize for efficiency, thermal management, complexity and cost
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Product Specifications
Voltage | RDS(on) (mΩ) @ 25°C |
RDS(on) (mΩ) @ 125°C |
![]() TO-247-3L |
![]() TO-247-4L |
![]() D2PAK-7L |
![]() TOLL |
750V |
5.4 | 9.3 | - | - | - | UJ4SC075005L8S |
5.9 | 9.8 | - | UJ4SC075006K4S | - | - | |
8.6 | 14.4 | - | - | - | UJ4SC075008L8S | |
9 | 14.8 | - | UJ4SC075009K4S | UJ4SC075009B7S | - | |
11 | 18.4 | - | UJ4SC075011K4S | UJ4SC075011B7S | - | |
18 |
29 | - | - | UJ4SC075018B7S | UJ4SC075018L8S | |
31 | UJ4C075018K3S | UJ4C075018K4S | - | - | ||
23 | 39 | UJ4C075023K3S | UJ4C075023K4S | UJ4C075023B7S | - | |
33 | 57 | UJ4C075033K3S | UJ4C075033K4S | UJ4C075033B7S | - | |
44 | 75 | UJ4C075044K3S | UJ4C075044K4S | UJ4C075044B7S | - | |
58 | 106 | UJ4C075060K3S | UJ4C075060K4S | UJ4C075060B7S | - | |
1200V |
23 | 42 | - | UF4SC120023K4S | - | - |
30 | 56 | - | UF4SC120030K4S | - | - | |
53 | 112 | UF4C120053K3S | UF4C120053K4S | - | - | |
72 | 140 | UF4C120070K3S | UF4C120070K4S | - | - |
FoM Parameters Normalized to Gen 4 SiC FETs
Based on published datasheets 7/22 from leading 20mΩ-30mΩ SiC MOSFETs.
- 750V VDS rating
- Low RDS(on) from 5.4mΩ to 60mΩ
- Best-in-class Figures of Merit (FoM)
- 5µs short-circuit withstand time @ 6mΩ
- Safely driven with standard 0V to 12V or 15V gate drive voltage
- Excellent threshold noise margin maintained with true 5V threshold voltage
- Operates with all Si IGBT, Si MOSFET and SiC MOSFET drive voltages
- Built-in ESD gate protection clamp
- Industry-standard TO-247-3L & TO-247-4L (Kelvin), TO-Leadless (TOLL), and D2PAK-7L packages
- Many are AEC-Q101 qualified. Qualification in process for all others. Contact Sales for more information at sales@unitedsic.com
FoM Parameters Normalized to G4 SiC FETs
Based on published datasheets 4/22 from leading 30mΩ-40mΩ SiC MOSFETs in TO-247-3L and TO-247-4L packages.
- 1200V VDS rating
- Low RDS(on) from 23mΩ to 70mΩ
- Best-in-class Figures of Merit (FoM)
- RDS x Area
- RDS(on) x Coss,tr
- RDS(on) x Eoss
- RDS(on) x Qg
- Safely driven with standard 0V to 12V or 15V gate drive voltage
- Excellent threshold noise margin maintained with true 5V threshold voltage
- Operates with all Si IGBT, Si MOSFET and SiC MOSFET drive voltages
- Built-in ESD gate protection clamp
- Industry-standard TO-247-3L and TO-247-4L (Kelvin) packages
- AEC-Q101 qualification in process. Contact Sales for more information at sales@unitedsic.com
Industry-leading Figures of Merit (FoM)
Figure-of-Merit (FoM) comparisons are critical for power designers to identify the best technology for their design, not merely based on a specific product spec, but by comparing performance widely across a variety of topologies, power levels, etc.
The datasheet results shown below illustrate how the UnitedSiC (now Qorvo) high-performance Gen 4 series deliver lower conduction loss, simple gate driving, and reduced switching losses in hard and soft-switched circuits compared to competing SiC FET devices.
Hard-Switching
Lowest total losses based on low Eoss / Qoss x RDS(on)
- Nearly 1.5X better than the competition
RDS(on) x Area
Lowest conduction losses across useful temperature range, for a given footprint or package type
Soft-Switching
Maintaining low RDS(on) x Coss,tr enables higher power density in soft-switched applications
- 2.5-6X lower gate drive losses by Qg x VDrive
- Excellent body diode enables reliable operation out of resonance
Hard-Switching
Lowest total losses based on low Eoss / Qoss x RDS(on)
- Nearly 2X better than the competition
Soft-Switching
Maintaining low RDS(on) x Coss,tr enables higher power density in soft-switched applications
- 5-10X lower gate drive losses by Qg x VDrive
- Excellent body diode enables reliable operation out of resonance
RDS(on) x Qg
Low RDS(on) x Qg and 0-12V gate drive voltage reduces driver losses, especially in high-frequency soft switched applications
- Simplifies design
- Reduces board-level thermal management
Selecting the best SiC FET for your design
1
Evaluate with FET-Jet Calculator
Get instant loss and efficiency results for multiple power topologies
2
Run detailed simulation
Using SPICE models
3
Purchase devices, verify design
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