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Introducing Gen 4 SiC FETs

The new Gen 4 UJ4C series of SiC FETs deliver breakthrough performance levels designed to accelerate the power performance gains in automotive and industrial charging, telecom rectifiers, datacenter PFC DC-DC conversion as well as renewable energy and energy storage applications.  Highlights of the new SiC FET series are:

  • 750V VDS rating
  • Best-in-class performance figures of merit that lower conduction losses and increase efficiency at higher speed, all at new levels of cost effectiveness
  • Safely driven with standard 0V to 12V or 15V gate drive voltage
  • Excellent threshold noise margin maintained with true 5V threshold voltage
  • Operates with all Si IGBT, Si MOSFET and SiC MOSFET drive voltages
  • Built-in ESD gate protection clamp
  • All devices are AEC-Q101 qualified
  • Uses industry-standard TO247-3L and TO247-4L (Kelvin) packages
Based on our Generation 4 technology, these new SiC FETs incorporate exceptional features that offer power designers a direct path to better performance and efficiency in their own systems.

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Key Features

  • 750V

  • Low RDS(on) from 18mohm to 60mohm

  • Key Figures of Merit enable next gen, high-performance power designs

    • Best-in-class RDS(on) x Area

    • Improve the Qrr and Eon/Eoff losses at a given RDS(on)

    • Reduce both Coss(er)/Eoss and Coss(tr)

  • Excellent reverse recovery

  • Excellent body diode performance (Vf<2V)

  • Low gate charge

  • ESD protected, HBM class 2

  • TO247-3L & TO247-4L (Kelvin) packages

  • AEC-Q101 qualified

750v bar graph new with UJ4C

Product Specifications









Irated (Tc 100°C) 60A 21A
Voltage rating 750V 750V
RDS(on) @ 25°C 18mΩ 60mΩ
RDS(on) @ 125°C 31mΩ 106mΩ
Tj (max) 175°C 175°C
Rth, j-c (max) 0.3°C/W 0.75°C/W
Qg 38nC 38nC
VFSD @ 25C 1.2V 1.3V
Eoss (400V) 12uJ 4uJ
Coss, tr (400V) 280pF 94pF


Best Figures of Merit

Figure-of-Merit (FoM) comparisons are critical for power designers to assess the performance potential of competing technologies.  By evaluating technologies on a FoM basis, designers are able to identify the best technology for their design, not merely based on a specific product spec, but compare performance widely across a variety of topologies, power levels etc. 

UnitedSiC’s new 750V Gen 4 SiC FETs achieve industry-leading performance for power switch FoMs with new benchmarks in RDS(on) x Area, RDS(on) x Coss,tr and RDS(on) x Eoss.  The datasheet results shown below illustrate how the new high-performance Gen 4 series devices deliver lower conduction loss, simple gate driving, and reduced switching losses in hard and soft-switched circuits compared to competing SiC FET devices.

RDS(on) x A chart-1

RDS(on) x Area

Lowest conduction losses across useful temperature range, for a given footprint or package type

  • 65-75% less conduction losses @ 25°C
  • 45-70% less conduction losses @ 125°C

Hard switching chart
Eoss hard switching


Lowest total losses based on low Eoss / Qoss x RDS(on)

  • Nearly 2X better than competition

RDS(on) x A chart
Coss tr LCC turn off


Maintaining low RDS(on) x Coss,tr enables higher power density in soft-switched applications

  • 5-10X lower gate drive losses by Qg x VDrive
  • Excellent body diode enables reliable operation out of resonance

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