SiC FETs in EV Applications
Practical electric vehicles have gone from niche to mainstream and have spawned a whole new application area for power conversion. In the vehicle, every watt lost in power conversion translates to shorter range, and in chargers translates to higher running costs and longer payback. Efficiency is key with an emphasis on the need for high voltage semiconductor switches with lowest loss.
On-board Charging and DC/DC Converters
Performance improvements of SiC FETs and the availability of a wide range of Rds(on) classes in both through-hole and surface mount packages allows designers to keep improving on-board charger designs in efficiency, size, and thermal performance while keeping costs low. Furthermore, using a simpler 0 to 10/12/15 V gate drive helps manage cost and complexity.
- Low RDS(on) x Eoss
- Low RDS(on) x Coss
- Simple gate drive (0-12V)
- Low Vf diode
- Finding your high voltage power design sweet spot
- The true realization of SiC’s automotive credentials
- Back to the future – forward from the past?
- SiC applications in electric vehicle (EV) power conversion
- Enabling an efficient and dynamic electric vehicle charging network
- Can cascodes provide the stepping stone into SiC needed for EV success?
APPNOTES/WHITE PAPERS
- Improvements in on-board charging using latest SiC technology
- Origins of SiC FETs and their evolution towards the perfect switch
- New semiconductor technologies are driving higher efficiency in power conversion
VIDEOS
EV Traction Inverters
Inverters needed for EV traction typically range between 60kW and 200kW. The use of SiC FETs in these designs can result in a 3X reduction in losses at 200kW and a 6X reduction in losses at 50kW. This ensures a stable thermal design for rapid periods of acceleration despite the much smaller size of SiC FETs. In addition, designers can realize excellent range enhancements from the light-load loss reduction.
- Low RDS(on) die
- Low RDS(on) x Eoss
- Low RDS(on) x Coss
- Simple gate drive (0-12V)
- Low Vf diode
- Lowest on-resistance SiC FETs offer rugged short-circuit performance
- Regenerative power efficiency is becoming a real differentiator
- The road to the EV evolution is paved with SiC
- How to build better EV traction inverters with SiC
- Ultra-high voltage SiC and Supercascodes
- Can cascodes provide the stepping stone into SiC needed for EV success?
VIDEOS
EV Battery Chargers
SiC is enabling a revolution in EV transportation. In addition to their high critical breakdown voltage, high-temperature operation, and high thermal conductivity, SiC FETs boast high immunity to avalanche effects with over-voltages, high immunity to short circuits, and lower switching losses than other WBG devices due to lower device capacitance, making them ideal devices for EV charging applications.
- Low RDS(on) die
- Low RDS(on) x Eoss
- Low RDS(on) x Coss
- Simple gate drive (0-12V)
- Low Vf diode
Supporting Design Resources
FET-Jet CalculatorTM
Quickly evaluate and identify the optimal SiC device for your power topology
Important SiC FET design considerations and snubber recommendations
Practical solutions and guidelines for using RC snubbers with fast switching SiC devices
Find the ideal SiC FET and complimentary SiC devices for your high-performance power design